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PV-TS02-13




结构  structure
底部高温区采用悬空设计,悬空结构与两侧面的百叶窗漕口贯通,二极管区域产生的热量可以通过空气的对流及时散发,避免高温区域对背叛与电池片的危害。
Suspended structure design is Applied in the high temperature bottom of the box.Louver and grid window are also in place to circulate in time the heat conductted by the gule.This design reduces the heat impact on back sheet and cells the module.
采用分仓式结构设计:将汇流条连接仓与二极管合体仓分隔开,二极管盒体在出厂时预先灌胶
Separate cabinet design to keep Bus bar soldering cabinet separate from diode cabinet.Glue is filled up in diode cabinet before delivery.

优点 advantage
相比市场同类型接线盒成本更低
汇流条焊接区灌接区胶量少46%,仅有10.5ml
相比同类接线盒二极管温度降低13℃
Compared to the same type of junction box of the market and lower cost
13ml gule to be used to filling in the bus bar soldering cabinet
About 13℃ of diode temperature lower than Junction box of the same category

技术参数  Technical Data

项目 (Item)

说明 (Description)

外形尺寸 (L×W×H)
Outline size (L×W×H)

110*87*18mm

外壳保护等级
Degree of protection by enclosure

IP67

污染等级
Pollution degree

Class Ⅱ

接线端子数量
Number of terminals

4 pieces

汇流条宽度
Width of bus ribbon

Max 7 mm

旁路二极管型号和数量
Type and number of bypass-diodes

3pieces of Schottky diode

电缆线导体截面面积
Cable conductor cross section

4m㎡

额定电压
Pated voltages
额定电流
Rated current

1000V DC

13A

配合使用功率
Mated power of module

180-300W


电性能相关测试数据(Electrical test data)

接触电阻
Contact resistance

≤5mΩ(type value 1mΩ up to 3mΩ)

通路电阻
Channel tesistance

9.84mΩ avg.of 10 boxes

温升
Temperature rise test(13A@85℃ condition)

162.1℃ at 1 hour later and 167.3℃ at 2 hour later


二极管主要性能指标(Diode main characteristics)

正向压降(25℃) VF
Forward voltage drop

VF≤0.55V

反向压降(25℃)VRRM

VRRM≥45V

不同温度下的反向漏电流IR(每个接线盒3个二极管均值)(μA)
Reverse leakage current at different temperatures(average of 3 diodes of per box) (μA)

-10℃

0℃

25℃

40℃

60℃

80℃

90℃

1.2

3.8

5.4

12.4

38.9

100.0

151.5

 
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